SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION. HIGH CURRENT APLICATION.
FEATURES ᴌHigh DC Current Gain and Excel...
SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION. HIGH CURRENT APLICATION.
FEATURES ᴌHigh DC Current Gain and Excellent hFE Linearity
: hFE(1)=140ᴕ600 (VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 200(Typ.) (VCE=1V, IC=2A). ᴌLow Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
DC Pulse (Note1)
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO VCES VCEO VEBO
IC ICP IE PC Tj
Storage Temperature Range
Tstg
Note 1 : Pulse Width⏊10ms, Duty Cycle⏊30%
RATING 30 30 10 6 2 5 -2 1 150
-55ᴕ150
UNIT V
V
V
A
A W ᴱ ᴱ
O D
KTC3226
EPITAXIAL PLANAR
NPN TRANSISTOR
BD
G JA R
P DEPTH:0.2
C
Q K
FF
HH M EM
123
HL
NN 1. EMITTER 2. COLLECTOR 3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX J 14.00+_ 0.50
H
K L
0.35 MIN 0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency
ICBO IEBO V(BR)CEO V(BR)EBO hFE(1) (Note2) hFE(2) VCE(sat) VBE fT
VCB=30V, IE=0 VEB=6V, IC=0 IC=10mA, IB=0 IE=-1mA, IC=0 VCE=1V, IC=0.5A VCE=1V, IC=2A IC=2A, IB=...