KTC3400

SEMICONDUCTOR TECHNICAL DATA DIFFERENTIAL AMP. APPLICATION. FEATURES Matched Pairs for Differential Amplifiers. High Breakdown Voltage : VCEO=120V(Min.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTA2400. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Emitter Current IE Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING 120 120 5 100 -100 625 150 -55 150 UNIT V V V mA mA mW L M C KTC3400 EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=120V, IE=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 DC Current Gain hFE (Note) VCE=6V, IC=2mA Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA Transition Frequency fT VCE=6V, IC=1mA Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Noise Figure NF VCE=6V, IC=0.1mA, f=1kHz, Rg=10k Note : hFE Classification G :200 400, In case of G , :A to G, GR:200~400 MIN. - 120 200 - TYP. - 100 4.0 1.0 MAX. 0.1 0.1 400 0.3 10 UNIT A A V V MHz pF dB hFE Classification GA GB GC GD hFE 200 2...