KTC3600U

SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3600U EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13dB (f=1GHz). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Range Tstg RATING 20 10 1.5 40 100 150 -55 150 UNIT V V V mA mW A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. EMITTER 2. BASE 3. COLLECTOR USM Marking hFE Rank Type Name R Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=10V, IE=0 Emitter Cut-off Current IEBO VEB=1V, IC=0 DC Current Gain hFE (Note1) VCE=8V, IC=20mA Collector Output Capacitance Reverse Transfer Capacitance Cob VCB=10V, IE=0, f=1MHz (Note2) Cre Transition Frequency fT VCE=8V, IC=20mA Insertion Gain |S21e|2 (1) |S21e|2 (2) VCE=8V, IC=20mA, f=1GHz VCE=8V, IC=20mA, f=2GHz Noise Figure NF (1) NF (2) VCE=8V, IC=5mA, f=1GHz VCE=8V, IC=5mA, f=2GHz Note 1 : hFE Classification H:50~100, J:80~160, K:125~250 Note 2 : Cre is measured by 3 terminal method with capacitance bridge. MIN. 50 7 10 - TYP. 0.7 0.5 10 13 7 1.1 1.7 MAX. 1 1 250 -...