KTC3605T

SEMICONDUCTOR TECHNICAL DATA KTC3605T EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13dB (f=1GHz). Two internal isolated Transistors in one package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC* Tj 20 10 1.5 40 900 150 Storage Temperature Range Tstg -55 150 *Package mounted on a ceramic board (600mm2 0.8mm) UNIT V V V mA mW EQUIVALENT CIRCUIT (Top View) 654 Q2 Q1 123 A F GG C L E K BK 16 25 34 D DIM A B C D E F G H I J K L MILLIMETERS 2.9+_ 0.2 1.6+0.2/-0.1 0.70+_ 0.05 0.4+_ 0.1 2.8+0.2/-0.3 1.9+_ 0.2 0.95 0.16+_ 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 I H JJ 1. Q1 Base 2. Q1 Emitter 3. Q2 Collector 4. Q2 Base 5. Q2 Emitter 6. Q1 Collector TS6 Marking hFE Rank Type Name R Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=10V, IE=0 Emitter Cut-off Current IEBO VEB=1V, IC=0 DC Current Gain hFE (Note1) VCE=8V, IC=20mA Collector Output Capacitance Reverse Transfer Capacitance Cob VCB=10V, IE=0, f=1MHz (Note2) Cre Transition Frequency fT VCE=8V, IC=20mA Insertion Gain |S21e|2 (1) |S21e|2 (2) VCE=8V, IC=20mA, f=1GHz VCE=8V, IC=20mA, f=2GHz Noise Figure NF (1) NF (2) VCE=8V, IC=5mA, f=1GHz VCE=8V, IC=5mA, f=2GHz Note 1 ...