KTC3620S

SEMICONDUCTOR TECHNICAL DATA VHF/UHF/WIDE BAND AMPLIFIER APPLICATON. FEATURES Low Noise Figure. High Gain. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEBO Collector Current IC Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING 9 6 2 30 100 150 -55 150 UNIT V V V mA mW KTC3620S EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETER A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking A Type Name hFE Rank ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Insertion Gain Noise Figure ICBO IEBO hFE (Note1) Cre (Note2) fT |S21e|2 NF VCB=5V, IE=0 VEB=1V, IC=0 VCE=3V, IC=10mA VCB=3V, IE=0, f=1MHz VCE=3V, IC=10mA, f=2GHz VCE=3V, IC=10mA, f=2GHz VCE=3V, IC=3mA, f=2GHz Note 1) hFE Classification 1(01):75~110, 2(02):95~140. Note 2) Cre is measured by 3 terminal method with capacitance bridge. MIN. 75 6.5 - TYP. 0.4 12.0 8 1.5 MAX. 100 100 140 0.7 2.5 UNIT nA nA pF GHz dB dB 2008. 7. 14 Revision No : 0 1/7 KTC3620S DC CURRENT GAIN hFE TRANSITION FREQUENCY f T (GHz) hFE - IC 500 VC...