KTC3708U

SEMICONDUCTOR TECHNICAL DATA High frequency amplifier transistor, RF switching application. FEATURES Very low on resistance (RON). Low capacitance. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Range Tstg RATING 12 6 3 50 100 150 -55 150 UNIT V V V mA mW KTC3708U EPITAXIAL PLANAR NPN TRANSISTOR A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. EMITTER 2. BASE 3. COLLECTOR USM Marking Type Name EA Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance On Resistance SYMBOL ICBO IEBO hFE VCE(sat) fT Cob Ron TEST CONDITION VCB=10V, IE=0 VEB=2V, IC=0 VCE=5V, IC=5mA IC=10mA, IB=1mA VCE=5V, IE=-10mA, f=200MHz VCB=10V, IE=0A, f=1MHz IB=3mA, VI=100mVrms, f=500kHz MIN. - 270 - 300 - TYP. - 800 1 2 MAX. 0.5 0.5 560 0.3 1.7 - UNIT A A V MHz pF 2008. 8. 29 Revision No : 1 1/3 KTC3708U 2008. 8. 29 Revision No : 1 2/3 KTC3708U 2008. 8. 29 Revision No : 1 3/3 ...