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KTC3730V Dataheets PDF



Part Number KTC3730V
Manufacturers KEC
Logo KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet KTC3730V DatasheetKTC3730V Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. Small rbb’Cc (Typ. 4pS). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC PC Tj Tstg RATING 20 11 3 50 100 150 -55 150 UNIT V V V mA mW A G H KTC3730V EPITAXIAL PLANAR NPN TRANSISTOR K JD E B 2 DIM MIL.

  KTC3730V   KTC3730V


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SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. Small rbb’Cc (Typ. 4pS). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC PC Tj Tstg RATING 20 11 3 50 100 150 -55 150 UNIT V V V mA mW A G H KTC3730V EPITAXIAL PLANAR NPN TRANSISTOR K JD E B 2 DIM MILLIMETERS A 1.2 +_0.05 B 0.8 +_0.05 1 3 C 0.5 +_ 0.05 D 0.3 +_ 0.05 E 1.2 +_ 0.05 G 0.8 +_ 0.05 PP H 0.40 J 0.12+_ 0.05 K 0.2 +_ 0.05 P5 1. EMITTER 2. BASE 3. COLLECTOR VSM C Marking R Type Name hFE Rank ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain Collector Output Capacitance ICBO IEBO VCE(sat) hFE (Note) Cob Collector-Base Time Constant rbb’Cc Transition Frequency fT Noise Figure NF Note) hFE Classification : F:56~120, G:82~180 TEST CONDITION VCB=10V, IE=0 VEB=2V, IC=0 IC=10mA, IB=5mA VCE=10V, IC=5mA VCB=10V, IE=0, f=1MHz VCE=10V, IE=10mA, f=31.8MHz VCE=10V, IC=10mA, f=500MHz VCE=6V, IC=2mA, f=500MHz, Rg=50 MIN. 56 1.4 - TYP. 0.8 4 3.2 MAX. 500 0.5 0.5 180 1.5 12 - UNIT nA A V pF pS GHz 3.5 - dB 2004. 1. 28 Revision No : 1 1/3 KTC3730V COLLECTOR POWER DISSIPATION PC (mW) TYPICAL CHARACTERISTICS (Ta=25 C) Pc - Ta 300 200 100 0 0 50 100 150 AMBIENT TEMPERATURE Ta ( C) DC CURRENT GAIN hFE hFE - I C 500 VCE =10V 300 100 50 30 10 0.1 0.3 0.5 1 3 5 10 30 50 COLLECTOR CURRENT IC (mA) COLLECTOR SATURATION VOLTAGE VCE(sat) (mW) VCE(sat) - I C 500 300 100 50 IC /IB=10 30 10 0.1 IC /IB=2 0.3 0.5 1 3 5 10 30 50 COLLECTOR CURRENT IC (mA) 2004. 1. 28 Revision No : 1 INSERTION GAIN S 2le 2 (dB) INSERTION GAIN S2le 2 (dB) OUTPUT CAPACITANCE Cob (pF) REVERSE TRANSFER CAPACITANCE Cre (pF) C ob , C re - VCB 5 f=1MHz 3 I E =0A 1 Cob 0.5 Cre 0.3 0.1 0.1 0.3 0.5 1 3 5 10 30 50 COLLECTOR-BASE VOLTAGE VCB (V) S 2le 2 - I C 15 10 5 0 0.5 VCE =10V f=500MHz 1 3 5 10 30 50 COLLECTOR CURRENT IC (mA) 30 25 20 15 10 5 0 0.1 S 2le 2 - f VCE =10V I C=10mA 0.3 0.5 1 FREQUENCY f (GHz) 3 2/3 TRANSITION FREQUENCY f T (GHz) KTC3730V fT - IE 5 3 1 0.5 0.3 0.1 -0.1 VCE =10V -0.3-0.5 -1 -3 -5 -10 -30 -50 EMITTERCURRENT I E (mA) COLLECTOR BASE TIME CONSTANT Cc. rbb (ps) rbb. Cc - I C 50 VCE =10V 30 f=31.8MHz 10 5 3 1 0.1 0.3 0.5 1 3 5 10 30 50 COLLECTOR CURRENT IC (mA) NOISE FIGURE NF (dB) NF - I C 20 VCE =6V f=500MHz 10 0 0.1 0.3 0.5 1 3 5 10 30 50 COLLECTOR CURRENT IC (mA) INSERTION GAIN S 2le 2 (dB) S 2le 2 - VCE 25 IC =10mA f=500MHz 20 15 10 5 0 0 2 4 6 8 10 COLLECTOR EMITTER VOLTAGE VCE (V) NOISE FIGURE NF (dB) NF - VCE 25 IC =10mA f=500MHz 20 15 10 5 0 0 2 4 6 8 10 COLLECTOR EMITTER VOLTAGE VCE (V) 2004. 1. 28 Revision No : 1 3/3 .


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