SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3780U
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURE...
SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3780U
EPITAXIAL PLANAR
NPN TRANSISTOR
FEATURES Low Noise Figure, High Gain. NF=1.4dB, |S21e|2=12dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC PC Tj
Storage Temperature Range
Tstg
RATING 15 6 1.5 50 100 125
-55 125
UNIT V V V mA mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Output Capacitance Transition Frequency Insertion Gain
ICBO IEBO hFE Cob fT |S21e|2
Noise Figure
NF
TEST CONDITION VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=10mA VCB=5V, IE=0, f=1MHz VCE=5V, IC=10mA VCE=5V, IC=10mA, f=1GHz VCE=5V, IC=5mA, f=1GHz
MIN. 50 5 9 -
TYP. 8 12 1.4
MAX. 1 1 250 1.0 -
UNIT A A
pF GHz dB dB
2008. 8. 29
Revision No : 3
1/2
KTC3780U
2008. 8. 29
Revision No : 3
2/2
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