KTC4080

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES Small Reverse Transfer Capacitance : Cre=0.7pF(Typ.) Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 40 30 4 20 -20 100 150 -55 150 UNIT V V V mA mA mW KTC4080 EPITAXIAL PLANAR NPN TRANSISTOR A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MIN P 0.1 MAX 1. EMITTER 2. BASE 3. COLLECTOR USM Marking hFE Rank Type Name Q Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Collector-Base Time Constant Noise Figure Power Gain ICBO IEBO hFE (Note) Cre fT CC rbb’ NF Gpe VCB=18V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCB=6V, f=1MHz VCE=6V, IC=1mA VCB=6V, IE=-1mA, f=30MHz VCC=6V, IE=-1mA, f=100MHz (Fig.) Note : hFE Classification R(1):40 80, O(2):70 140, Y(4):100 200 MIN. 40 - 300 15 TYP. 0.7 550 2.5 18 MAX. 0.5 0.5 200 30 5.0 - UNIT A A pF MHz pS dB 2008. 8. 29 Revision No : 4 1/6 KTC4080 ...