SEMICONDUCTOR
TECHNICAL DATA
KTX111T
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Includi...
SEMICONDUCTOR
TECHNICAL DATA
KTX111T
EPITAXIAL PLANAR
NPN/
PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Including two devices in TS6. (Thin Super Mini type with 6 pin) Simplify circuit design. Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Marking
Q1 Q2
6
hFE Rank
5
BType Name
12 3
12
4 3
Lot No.
C L
A F GG
E K BK
16
25
34
H JJ
1. Q1 EMITTER 2. Q1 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q2 BASE 6. Q1 COLLECTOR
I
D
DIM A B C D E
F G H I J K L
MILLIMETERS 2.9+_ 0.2
1.6+0.2/-0.1 0.70+_ 0.05
0.4+_ 0.1 2.8+0.2/-0.3
1.9+_ 0.2
0.95 0.16+_ 0.05 0.00-0.10
0.25+0.25/-0.15
0.60 0.55
TS6
Q1 MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current
Q2 MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current
Q1, Q2 MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC
Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 0.8 )
2002. 1. 24
Revision No : 1
SYMBOL VCBO VCEO VEBO IC IE
SYMBOL VCBO VCEO VEBO IC IE
SYMBOL PC * Tj Tstg
RATING 35 30 5 500 -500
RATING -35 -30 -5 -500 500
RATING 0.9 150
-55 150
UNIT V V V
UNIT V V V
UNIT W
1/4
KTX111T
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gai...