MJE13003

SEMICONDUCTOR TECHNICAL DATA MJE13003 TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current VCBO VCEO VEBO IC ICP IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING 700 400 9 1.5 3 0.75 1.5 20 150 -55 150 UNIT V V V A A W A B C H J K D E F G L M N O P 12 3 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 Φ3.2+_ 0.1 3.5 11.0 +_ 0.3 2.9 MAX 1.0 MAX 1.9 MAX 0.75 +_ 0.15 15.50+_ 0.5 2.3 +_ 0.1 0.65 +_ 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Emitter Cut-off Current Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency IEBO ICBO hFE(1) (Note) hFE(2) VCE(sat) VBE(sat) Cob fT VEB=9V, IC=0 VCB=700V, IE=0 VCE=2V, IC=0.5A VCE=2V, IC=1A IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1A, IB=0.25A VCB=10V, f=0.1MHz, IE=0 VCE=10V, IC=0.1A Turn-On Time Storage Time ton 300µS INPUT IB1 tstg IB1 IB2 IB2 Fall Time tf IB1=IB2 =0.2A DUTY CYCL...