MJE13005D

SEMICONDUCTOR TECHNICAL DATA MJE13005D TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 800 400 10 5 10 2 75 150 -55 150 V V V A A W Equivalent Circuit C B A F EG B Q I K M L D NN 123 J O C P H 123 1. BASE 2. COLLECTOR 3. EMITTER DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8+_ 0.1 3.6 +_ 0.2 2.8 +_ 0.1 3.7 0.5+0.1/-0.05 1.5 13.08+_ 0.3 1.46 1.4 +_ 0.1 1.27+_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0.2 TO-220AB ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Emitter Cut-off Current DC Current Gain IEBO hFE(1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency Turn-On Time Storage Time Fall Time Diode Forward Voltage VBE(sat) Cob fT ton tstg tf VF *Reverse recovery tims (di/dt=10A/ S) trr *Pulse Test : Pulse Width = 5mS, Duty cycles 10% Note : hFE Classification R : 18~27, O : 23~35 E TEST CONDITION VEB=9V, IC=0 VCE=5V, IC=1A VCE=5...