MJE13007 TRANSISTOR Datasheet

MJE13007 Datasheet, PDF, Equivalent


Part Number

MJE13007

Description

TRIPLE DIFFUSED NPN TRANSISTOR

Manufacture

KEC

Total Page 2 Pages
Datasheet
Download MJE13007 Datasheet


MJE13007
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FEATURES
Excellent Switching Times
: ton=1.6 S(Max.), tf=0.7 S(Max.), at IC=5A
High Collector Voltage : VCBO=700V.
MJE13007
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Emitter-Base Voltage
VEBO
Collector Current
DC
Pulse
IC
ICP
Base Current
Collector Power Dissipation
(Tc=25 )
Junction Temperature
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
700
400
9
8
16
4
80
150
-55 150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
IEBO VEB=9V, IC=0
hFE(1) (Note) VCE=5V, IC=2A
hFE(2)
VCE=5V, IC=5A
IC=2A, IB=0.4A
VCE(sat)
IC=5A, IB=1A
IC=8A, IB=2A
VBE(sat)
IC=2A, IB=0.4A
IC=5A, IB=1A
Cob VCB=10V, f=0.1MHz, IE=0
fT VCE=10V, IC=0.5A
Turn-On Time
Storage Time
Fall Time
ton 300ยตS
OUTPUT
IB1
INPUT
tstg
IB1
IB2 IB2
tf
IB1=IB2 =1A
DUTY CYCLE <= 2%
VCC =125V
Note : hFE Classification R:15 27, O:23 39
MIN.
-
15
10
-
-
-
-
-
-
4
TYP.
-
-
-
-
-
-
-
-
110
-
MAX.
1
39
-
1
2
3
1.5
1.6
-
-
UNIT
mA
V
V
pF
MHz
-
- 1.6
S
--3 S
-
- 0.7
S
2008. 3. 26
Revision No : 1
1/2

MJE13007
MJE13007
2008. 3. 26
Revision No : 1
2/2


Features SEMICONDUCTOR TECHNICAL DATA SWITCHING R EGULATOR APPLICATION. HIGH VOLTAGE SWIT CHING APPLICATION. HIGH SPEED DC-DC CON VERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.6 S(Max.), tf=0 .7 S(Max.), at IC=5A High Collector Vol tage : VCBO=700V. MJE13007 TRIPLE DIFF USED NPN TRANSISTOR MAXIMUM RATING (Ta =25 ) CHARACTERISTIC SYMBOL Collecto r-Base Voltage Collector-Emitter Voltag e VCBO VCEO Emitter-Base Voltage VEB O Collector Current DC Pulse IC ICP Base Current Collector Power Dissipati on (Tc=25 ) Junction Temperature IB PC Tj Storage Temperature Range Tstg R ATING 700 400 9 8 16 4 80 150 -55 150 UNIT V V V A A W ELECTRICAL CHARACTERI STICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Emitter Cut-off Curren t DC Current Gain Collector-Emitter Sat uration Voltage Base-Emitter Saturation Voltage Collector Output Capacitance T ransition Frequency IEBO VEB=9V, IC=0 hFE(1) (Note) VCE=5V, IC=2A hFE(2) V CE=5V, IC=5A IC=2A, IB=0.4A VCE(sat) IC=5A, IB=1A IC=8A, IB.
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