P-Channel Power MOSFET
STD10P10F6
Datasheet
P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package
TAB 23 1
DPAK
D(2,...
Description
STD10P10F6
Datasheet
P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package
TAB 23 1
DPAK
D(2, TAB)
G(1)
S(3)
Features
Order code
VDS
STD10P10F6
-100 V
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
RDS(on) max. 0.18 Ω
ID -10 A
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages.
Product status link STD10P10F6
Product summary
Order code
STD10P10F6
Marking
10P10F6
Package
DPAK
Packing
Tape and reel
DS10343 - Rev 3 - April 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC=25 °C
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width limited by safe operating area.
Table 2. Thermal data
Symbol Parameter
RthJC
Thermal resistance, junction-to-case
RthJB (1) Thermal resistance, junction-to-board
1. When mounted on FR-4 board of 1inch², 2oz Cu t < 10 s.
STD10P10F6
Electrical ratings
Value
Unit
-100
V
±20
V
-10
...
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