STFI9N80K5

STF9N80K5, STFI9N80K5 N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Features Order code STF9N80K5 STFI9N80K5 VDS 800 V RDS(on) max. 0.90 Ω ID 7A TO-220FP I2PAKFP (TO-281) Figure 1: Internal schematic diagram D(2)  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power S(3) AM15572v1_no_tab density and high efficiency. Order code Table 1: Device summary Marking Package Packing STF9N80K5 STFI9N80K5 9N80K5 TO-220FP I²PAKFP(TO-281) Tube November 2015 DocID028359 Rev 2 This is information on a product in full production. 1/16 www.st.com Contents Contents STF9N80K5, STFI9N80K5 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package in...