Trench gate field-stop IGBT
STGF15M65DF2
Trench gate field-stop IGBT M series, 650 V 15 A low loss
Datasheet - preliminary data
TO-220FP Figure 1...
Description
STGF15M65DF2
Trench gate field-stop IGBT M series, 650 V 15 A low loss
Datasheet - preliminary data
TO-220FP Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode
Applications
Motor control UPS PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Order code STGF15M65DF2
Table 1: Device summary Marking
G15M65DF2
Package TO-220FP
Packing Tube
October 2015
DocID028488 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Contents
Contents
STGF15M65DF2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ....................
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