STH170N8F7-2

STH170N8F7-2 N-channel 80 V, 0.0028 Ω typ., 120 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package Datasheet — production data TAB 2 3 1 H2PAK-2 Features Order code VDS RDS(on) max. ID PTOT STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Figure 1. Internal schematic diagram '7$% * Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 +3$. Order code STH170N8F7-2 Table 1. Device summary Marking Package 170N8F7 H2PAK-2 Packaging Tape and reel February 2015 This is information on a product in full production. DocID026382 Rev 2 1/15 www.st.com Contents Contents STH170N8F7-2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...