N-channel Power MOSFET
STB130N6F7
N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a D²PAK package
Datasheet - production data
...
Description
STB130N6F7
N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3 1 D2PAK Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code STB130N6F7
VDS 60 V
RDS(on) max. 5.0 mΩ
ID 80 A
PTOT 160 W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
S(3)
Order code STB130N6F7
AM01475v1_Tab
Table 1: Device summary
Marking
Package
130N6F7
D²PAK
Packing Tape and reel
December 2015
DocID027380 Rev 5
This is information on a product in full production.
1/14
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Contents
Contents
STB130N6F7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 5
3 Test circuits ..................................................................................... 7
4 Package information ....................................................................... 8
4.1 D²PAK (TO-263) type A package...
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