STB7ANM60N

STB7ANM60N, STD7ANM60N Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh™ II 2 Power MOSFETs in D PAK and DPAK packages Datasheet - production data Features TAB 2 3 1 D 2 PAK TAB 3 1 DPAK Order codes VDS @ Tjmax RDS(on) max. ID STB7ANM60N STD7ANM60N 650 V 0.9 Ω 5A Designed for automotive applications and AEC-Q101 qualified 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram 'Ć7$% Applications Switching applications Description * 6 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $0Y Order codes STB7ANM60N STD7ANM60N Table 1. Device summary Marking Packages 7ANM60N 2 D PAK DPAK Packaging Tape and reel December 2013 This is information on a product in full production. DocID023350 Rev 2 1/20 www.st.com Contents Contents STB7ANM60N, STD7ANM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circ...