STB9NK80Z

STB9NK80Z Datasheet Automotive-grade N-channel 800 V, 1.5 Ω typ., 5.2 A SuperMESH Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code STB9NK80Z VDS 800 V RDS(on) max. 1.8 Ω ID 5.2 A AEC-Q101 qualified 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected Applications Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STB9NK80Z Product summary Order code STB9NK80Z Marking B9NK80Z Package D²PAK Packing Tape and reel DS9606 - Rev 3 - October 2019 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source human body model (C = 100 pF, R = 1.5 kΩ) dv/dt (2) Peak diode recovery voltage slope Tj Operating junction temperature range Tstg Storage temperature range 1. Pulse width limi...