STD20P3H6AG

STD20P3H6AG Automotive-grade P-channel -30 V, 33 mΩ typ., -20 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STD20P3H6AG VDS -30 V RDS(on) max. 50 mΩ ID -20 A  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STD20P3H6AG AM11258v1 Table 1: Device summary Marking Package 20P3H6 DPAK Packing Tape and reel September 2015 DocID028377 Rev 2 This is information on a product in full production. 1/15 www.st.com Contents Contents STD20P3H6AG 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A package information................................