STFI260N6F6

STFI260N6F6 N-channel 60 V, 0.0024 Ω, 80 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAKFP package Datasheet — preliminary data Features Order codes STFI260N6F6 VDSS 60 V RDS(on) max < 0.003 Ω ID 80 A ■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Application ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 12 3 I²PAKFP (TO-281) Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order codes Marking STFI260N6F6 260N6F6 Package I²PAK (TO-281) Packaging Tube April 2012 Doc ID 023096 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com 12 Contents Contents STFI260N6F6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mecha...