BFU580G

627 BFU580G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits  Low noise, high linearity, high breakdown RF transistor  AEC-Q101 qualified  Minimum noise figure (NFmin) = 0.75 dB at 900 MHz  Maximum stable gain 15.5 dB at 900 MHz  11 GHz fT silicon technology 1.3 Applications  Applications requiring high supply voltages and high breakdown voltages  Broadband amplifiers up to 2 GHz  Low noise, high linearity amplifiers for ISM applications  Automotive applications (e.g., antenna amplifiers) 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp  120 C hFE DC current gain IC = 30 mA; VCE = 8 V Cc collector capacitance VCB = 8 V; f = 1 MHz fT transition frequency IC = 30 mA; VCE = 8 V; f = 900 MHz Min Typ -- -- -- -- - 30 [1] - - 60 95 - 1.1 - 11 Max Unit 24 V 12 V 24 V 2V 60 mA 1000 mW 130 - pF - GHz NXP Semiconductors BFU580G NPN wideband silicon RF transi...