BFU590G

627 BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits  Medium power, high linearity, high breakdown voltage RF transistor  AEC-Q101 qualified  Maximum stable gain 13 dB at 900 MHz  PL(1dB) 21.5 dBm at 900 MHz  8.5 GHz fT silicon technology 1.3 Applications  Automotive applications  Broadband amplifiers  Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)  Large signal amplifiers for ISM applications 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp  90 C hFE DC current gain IC = 80 mA; VCE = 8 V Cc collector capacitance VCB = 8 V; f = 1 MHz fT transition frequency IC = 80 mA; VCE = 8 V; f = 900 MHz Min Typ -- -- -- -- - 80 [1] - - 60 95 - 1.9 - 8.5 Max Unit 24 V 12 V 24 V 2V 200 mA 2000 mW 130 - pF - GHz NXP Semiconductors BFU590G NPN wideband silicon RF transistor Table 1. Quick reference data …continued Tamb = 25 C unles...