BFU790F

BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits „ Low noise high linearity microwave transistor „ 110 GHz fT silicon germanium technology „ High maximum output power at 1 dB compression 20 dBm at 1.8 GHz 1.3 Applications „ High linearity applications „ Medium output power applications „ Wi-Fi / WLAN / WiMAX „ ZigBee „ LTE, cellular, UMTS NXP Semiconductors BFU790F NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCBO VCEO VEBO IC Ptot hFE collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation DC current gain CCBS fT collector-base capacitance transition frequency IP3O Gp(max) output third-order intercept point maximum power gain NF noise figure PL(1dB) output power at 1 dB gain compression Conditions open emitter open base open collector Tsp ≤ 90 °C IC = 10 mA; VCE = 2 V; Tj = 25 °C VCB = 2 V; f = 1 MHz IC = 100 mA; VCE = 1 V; f = 2 GHz; Tamb = 25 °C IC = ...