BFU910F

BFU910F NPN wideband silicon germanium RF transistor Rev. 2 — 16 January 2015 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal applications up to 20 GHz. 1.2 Features and benefits  Low noise high gain microwave transistor  Minimum noise figure (NFmin) = 0.65 dB at 12 GHz  Maximum stable gain 14.2 dB at 12 GHz  90 GHz fT SiGe technology 1.3 Applications  Ku band DBS Low-Noise blocks 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCE collector-emitter voltage RBE  1 M IC collector current Ptot total power dissipation Tsp  90 C hFE DC current gain IC = 6 mA; VCE = 2 V CCBS collector-base capacitance VCB = 2 V; f = 1 MHz fT transition frequency IC = 6 mA; VCE = 2 V MSG maximum stable gain IC = 6 mA; VCE = 2 V; f = 12 GHz NFmin minimum noise figure IC = 6 mA; VCE = 2 V; f = 12 GHz; S = opt Gass associated gain IC = 6 mA; VCE = 2 V; f = 12 GHz; S = opt PL(1dB) output power at 1 dB gain compression IC = 10 mA; VCE = 2 V; f = 12 GHz; ZS = ZL = 50  [1] Tsp is the temperature at the solder point of the emitter lead. Min Typ Max Unit - 2.0 3.0 V - 10 15 mA [1] - - 300 mW - 1900 - - 35 - fF - 90 - GHz - 14.2 - dB - 0.65 - dB - 13.0 - dB - 2 - dBm NXP Semiconductors BFU910F NPN w...