Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
30 V 8.7 mΩ 8.1 nC 14 A
IRF8714PbF-1
HEXFET® Power MOSFET
...
Description
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
30 V 8.7 mΩ 8.1 nC 14 A
IRF8714PbF-1
HEXFET® Power MOSFET
S1
AA 8D
S2
7D
S3
6D
G4
5D
Top View
SO-8
Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems
Features Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF8714PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF8714PbF-1 IRF8714TRPbF-1
Absolute Maximum Ratings
Parameter VDS Drain-to-Source Voltage
VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Max. 30 ± 20 14 11 110 2.5 1.6
0.02 -55 to + 150
Units V
A
W
W/°C °C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient
Typ. ––– –––
Max. 20 50
Units °C/W
Notes through
are on page 9
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November 22, 2013
IRF8714PbF-1
Static @ TJ = 25°C (unless otherwi...
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