Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
30 V 4.8 mΩ 17 nC 18 A
IRF8736PbF-1
HEXFET® Power MOSFET
S...
Description
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
30 V 4.8 mΩ 17 nC 18 A
IRF8736PbF-1
HEXFET® Power MOSFET
S1 S2 S3 G4
AA 8D 7D 6D 5D
Top View
SO-8
Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
Features Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF8736PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF8736PbF-1 IRF8736TRPbF-1
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
cPulsed Drain Current fPower Dissipation fPower Dissipation
TJ TSTG
Linear Derating Factor Operating Junction and
Storage Temperature Range
Max. 30 ± 20 18 14.4 144 2.5 1.6
0.02 -55 to + 150
Units V
A
W
W/°C °C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead fgRθJA Junction-to-Ambient
Notes through
are on page 9
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Max. 20 50
Units °C/W
November 22, 2013
IRF8736PbF-1
Static @ TJ = 25°C (unless otherwise specified)
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