IRFB4127PBF

PD -97136A Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free IRFB4127PbF HEXFET® Power MOSFET D VDSS 200V RDS(on) typ. 17m: max. 20m: S ID 76A DS G TO-220AB G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dv/dt Peak Diode Recovery e TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f Thermal Resistance Symbol Parameter RθJC RθCS RθJA www.irf.com Junction-to-Case j Case-to-Sink, Flat Greased Surface Junction-to-Ambient ij Max. 76 54 300 375 2.5 ± 20 57 -55 to + 175 300 10lbxin (1.1Nxm) 250 See Fig. 14, 15, 22a, 22b, Typ. ––– 0.50 ––– Max. 0.4 ––– 62 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 8/28/08 IRFB4127PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Pa...