Power MOSFET. IRFB4127PBF Datasheet

IRFB4127PBF MOSFET. Datasheet pdf. Equivalent


Part IRFB4127PBF
Description Power MOSFET
Feature PD -97136A Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power.
Manufacture International Rectifier
Datasheet
Download IRFB4127PBF Datasheet


PD -97136A Applications l High Efficiency Synchronous Recti IRFB4127PBF Datasheet
Recommendation Recommendation Datasheet IRFB4127PBF Datasheet




IRFB4127PBF
PD -97136A
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRFB4127PbF
HEXFET® Power MOSFET
D VDSS
200V
RDS(on) typ.
17m:
max. 20m:
S ID
76A
DS
G
TO-220AB
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case j
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient ij
Max.
76
54
300
375
2.5
± 20
57
-55 to + 175
300
10lbxin (1.1Nxm)
250
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.4
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
8/28/08



IRFB4127PBF
IRFB4127PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
200
–––
–––
3.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG(int)
Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs Forward Transconductance
79
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
–––
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related)h –––
Effective Output Capacitance (Time Related)g –––
Typ.
–––
0.23
17
–––
–––
–––
–––
–––
3.0
Typ.
–––
100
30
31
69
17
18
56
22
5380
410
86
360
590
Max. Units
Conditions
–––
–––
20
5.0
20
250
100
-100
–––
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mAc
mΩ VGS = 10V, ID = 44A f
V VDS = VGS, ID = 250μA
μA VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Ω
Max. Units
Conditions
––– S VDS = 50V, ID = 44A
150 nC ID = 44A
––– VDS = 100V
––– VGS = 10V f
––– ID = 44A, VDS =0V, VGS = 10V
––– ns VDD = 130V
––– ID = 44A
––– RG = 2.7Ω
––– VGS = 10V f
––– VGS = 0V
––– VDS = 50V
––– pF ƒ = 1.0MHz
––– VGS = 0V, VDS = 0V to 160V h
––– VGS = 0V, VDS = 0V to 160V g
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 76 A MOSFET symbol
D
––– ––– 300
showing the
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 44A, VGS = 0V f
––– 136 ––– ns TJ = 25°C
VR = 100V,
––– 139 –––
––– 458 –––
TJ = 125°C
nC TJ = 25°C
IF = 44A
di/dt = 100A/μs f
––– 688 –––
TJ = 125°C
––– 8.3 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.26mH
RG = 25Ω, IAS = 44A, VGS =10V. Part not recommended for use
above this value .
ƒ ISD 44A, di/dt 760A/μs, VDD V(BR)DSS, TJ 175°C.
„ Pulse width 400μs; duty cycle 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C
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