Power MOSFET
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Swit...
Description
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
G
D S
IRFB4137PbF
HEXFET® Power MOSFET
VDSS RDS(on) typ.
max
ID
300V
56m 69m 38A
Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant
G
Gate
S D G
TO-220Pak
D
Drain
S
Source
Base part number Package Type
IRFB4137PbF
TO-220Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number IRFB4137PbF
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
Thermal Resistance
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Max. 38 27 152 341 2.3 ± 20 8.9
-55 to + 175
300
10 lbf·in (1.1 N·m)
Units
A
W W/°C
V V/ns
°C
414
Typ. ––– 0.50 –––
Max. 0.44 ––– 62
mJ Units °C/W
1 www.irf.com © 2012 International Rectifier
October 30, 2012
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