SEMICONDUCTOR
TECHNICAL DATA
KF10N65F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=650V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.95 @VGS=10V Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
650 30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above 25
ID IDP EAS EAR dv/dt
PD
10* 6* 25* 360
16.5
4.5 46 0.37
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
150 -55 150
Thermal Resistance, Junction-to-Case RthJC
2.7
Thermal Resistance, Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
UNIT V V
A
mJ mJ V/ns W W/
/W /W
Q
AC
F O
K
E
LM D
NN 123
G B
J
R
H
1. GATE 2. DRAIN 3. SOURCE
DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2
*Single Gauge Lead Frame
TO-220IS (1)
PIN CONNECTION
D
G S
2013. 8. 21
Revision No : 0
1/6
KF10N65F
ELECTRICAL CHARACTERISTICS (Tc=25 )
Static
CHARACTERISTIC
SYMBOL
TEST CONDITION
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=650V, VGS=0V
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=5A
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VDS=520V, ID=10A VGS=10V
(Note4,5)
VDD=325V ID=10A RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current Pulsed Source Current
IS VGS