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KF10N65F Dataheets PDF



Part Number KF10N65F
Manufacturers KEC
Logo KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet KF10N65F DatasheetKF10N65F Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KF10N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=650V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.95 @VGS=10V Qg(typ.)= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RAT.

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SEMICONDUCTOR TECHNICAL DATA KF10N65F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=650V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.95 @VGS=10V Qg(typ.)= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 10* 6* 25* 360 16.5 4.5 46 0.37 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC 2.7 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W Q AC F O K E LM D NN 123 G B J R H 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1 L 1.47 MAX M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2 *Single Gauge Lead Frame TO-220IS (1) PIN CONNECTION D G S 2013. 8. 21 Revision No : 0 1/6 KF10N65F ELECTRICAL CHARACTERISTICS (Tc=25 ) Static CHARACTERISTIC SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic BVDSS ID=250 A, VGS=0V BVDSS/ Tj ID=250 A, Referenced to 25 IDSS VDS=650V, VGS=0V Vth VDS=VGS, ID=250 A IGSS VGS= 30V, VDS=0V RDS(ON) VGS=10V, ID=5A Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=520V, ID=10A VGS=10V (Note4,5) VDD=325V ID=10A RG=25 (Note4,5) VDS=25V, VGS=0V, f=1.0MHz Continuous Source Current Pulsed Source Current IS VGS


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