KF2N60D

SEMICONDUCTOR TECHNICAL DATA KF2N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A RDS(ON)=4.4 (Max) @VGS = 10V Qg(typ) = 6.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA RATING 600 30 2.0 1.2 4.0 60 2.3 4.5 40.3 0.32 150 -55 150 3.1 110 UNIT V V A mJ mJ V/ns W W/ /W /W KF2N60D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 123 O 1. GATE 2. DRAIN 3. SOURCE DPAK (1) KF2N60I AH CJ BD M N G FF 123 K E P L 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 6.6+_0.2 B 6.1+_0.2 C 5.34 +_0.3 D 0.7+_0.2 E 9.3 +_0.3 F 2.3+_ 0.2 G 0.76+_0.1 H 2.3+_0.1 J 0.5+_ 0.1 K 1.8 +_ 0....