SEMICONDUCTOR
TECHNICAL DATA
KF2N60D/I
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe MO...
SEMICONDUCTOR
TECHNICAL DATA
KF2N60D/I
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.
FEATURES VDSS= 600V, ID= 2.0A RDS(ON)=4.4 (Max) @VGS = 10V Qg(typ) = 6.0nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID IDP EAS EAR dv/dt
Drain Power Dissipation
Tc=25 Derate above 25
PD
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-toAmbient
RthJC RthJA
RATING 600 30 2.0 1.2 4.0 60
2.3
4.5 40.3 0.32 150 -55 150
3.1 110
UNIT V V
A
mJ mJ V/ns W W/
/W /W
KF2N60D
A CD
B
H G
FF
J E
K L
N M
DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX
H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE 2. DRAIN 3. SOURCE
DPAK (1)
KF2N60I
AH CJ
BD
M N
G FF
123
K
E
P
L
1. GATE 2. DRAIN 3. SOURCE
DIM MILLIMETERS A 6.6+_0.2 B 6.1+_0.2 C 5.34 +_0.3 D 0.7+_0.2 E 9.3 +_0.3 F 2.3+_ 0.2 G 0.76+_0.1 H 2.3+_0.1 J 0.5+_ 0.1 K 1.8 +_ 0....