KF3N40W

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 2A Drain-Source ON Resistance : RDS(ON)=3.4 Qg(typ.) =4.4nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage VDSS 400 Gate-Source Voltage VGSS 30 Drain Current @TC=25 @TC=100 2* ID 1.2* Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) IDP EAS EAR dv/dt 6* 52 0.2 4.5 Drain Power Dissipation TA=25 Derate above25 PD 2** 0.02 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 10.0 62.5** * : Drain current limited by maximum junction temperature. ** : Surface Mounted on FR4 Board 2 Inch 2 Inch 1mm. UNIT V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION www.ckb-sh.com KF3N40W N CHANNEL MOS FIELD EFFECT TRANSISTOR 2010. 6. 16 Revision No : 0 1/6 KF3N40W ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Re...