SEMICONDUCTOR
TECHNICAL DATA
KF4N60D/I
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe M...
SEMICONDUCTOR
TECHNICAL DATA
KF4N60D/I
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 600V, ID= 3.2A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
600 30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above 25
ID IDP EAS EAR dv/dt
PD
3.2 2.0 12* 130
3.3
4.5 59.5 0.48
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj 150 Tstg -55 150
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-toAmbient
RthJC RthJA
2.1 110
* : Drain current limited by maximum junction temperature.
UNIT V V
A
mJ mJ V/ns W W/
/W /W
PIN CONNECTION
D
KF4N60D
A CD
B
H G
FF
J E
K L
N M
DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX
H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE 2. DRAIN 3. SOURCE
DPAK (1)
KF4N60I
AH CJ
BD
M N
G FF
123
K
E
P
L
1. GATE 2. DRAIN 3. SOURCE
DIM...