KF4N65FM

SEMICONDUCTOR TECHNICAL DATA KF4N65FM N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=650V, ID=3.6A Drain-Source ON Resistance : RDS(ON)(Max)=2.5 @VGS=10V Qg(typ.)= 15nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA RATING 650 30 3.6* 2.3* 8.4* 103 3.1 4.5 37.9 0.30 150 -55 150 3.3 62.5 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W Q AC F O K E LM D NN 123 G B J R H 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1 L 1.47 MAX M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2 * Single Gauge Lead Frame TO-220IS (1) PIN CONNECTION D G S 201...