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KF4N65P Dataheets PDF



Part Number KF4N65P
Manufacturers KEC
Logo KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet KF4N65P DatasheetKF4N65P Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA KF4N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=650V, ID=3.6A Drain-Source ON Resistance : RDS(ON)(Max)=2.5 @VGS=10V Qg(typ.)= 12nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING S.

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SEMICONDUCTOR TECHNICAL DATA KF4N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=650V, ID=3.6A Drain-Source ON Resistance : RDS(ON)(Max)=2.5 @VGS=10V Qg(typ.)= 12nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF4N65P KF4N65F Drain-Source Voltage VDSS 650 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 3.6 3.6* 2.3 2.3* 8.4 8.4* 103 3.1 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 83.3 0.67 37.9 0.30 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.5 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. 3.3 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION D Q KF4N65P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1 G 3.7 H 0.5+0.1/-0.05 I 1.5 J 13.08 +_ 0.3 K 1.46 L 1.4 +_ 0.1 M 1.27 +_ 0.1 N 2.54 +_ 0.2 O 4.5 +_ 0.2 P 2.4 +_ 0.2 Q 9.2 +_ 0.2 TO-220AB KF4N65F AC F O K E LM D NN 123 G B J R H 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1 L 1.47 MAX M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2 * Single Gauge Lead Frame TO-220IS (1) G 2011. 6. 21 S Revision No : 0 1/7 KF4N65P/F ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic BVDSS ID=250 A, VGS=0V BVDSS/ Tj ID=250 A, Referenced to 25 IDSS VDS=650V, VGS=0V, Vth VDS=VGS, ID=250 A IGSS VGS= 30V, VDS=0V RDS(ON) VGS=10V, ID=1.8A Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=520V, ID=3.6A VGS=10V (Note4,5) VDD=325V ID=3.6A RG=25 (Note4,5) VDS=25V, VGS=0V, f=1.0MHz Continuous Source Current Pulsed Source Current IS VGS


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