KF5N25F

SEMICONDUCTOR TECHNICAL DATA KF5N25F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies. FEATURES VDSS= 250V, ID= 5A Drain-Source ON Resistance : RDS(ON)(MAX)=1.1 @VGS = 10V Qg(typ) = 6nC MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 250 30 5* 3.1* 9* 55 2.5 4.5 26 0.2 150 -55 150 Thermal Resistance, Junction-to-Case RthJC Thermal Resistance, Junction-toAmbient RthJA * : Drain current limited by maximum junction temperature. 4.8 110 UNIT V V A mJ mJ V/ns W W/ /W /W Q A E F O C G B K LM D NN J R H 123 1. GATE 2. DRAIN 3. SOURCE *Single Gauge Lead Frame TO-220IS (1) DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1 L 1.47 MAX M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2 PIN CONNECTION D G S 2014. 12. 05 Revisio...