KF5N40D

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Convertor and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 4.2A Drain-Source ON Resistance : RDS(ON)=1.6 Qg(typ.) =5.5 nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TC=25 Derate above25 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 400 30 4.2 2.8 10* 70 2.7 4.5 50 0.4 150 -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 2.5 110 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION D KF5N40D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF5N40D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 123 O 1. GATE 2. DRAIN 3. SOURCE DPAK (1) KF5N40I AH CJ BD M N G FF 123 K E P L 1. GATE 2. DRAIN 3. SOURCE DI...