KF5N65F

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 650V, ID= 5A Drain-Source ON Resistance : RDS(ON)=1.75 Qg(typ) = 14.5nC (Max) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KF5N65P KF5N65F Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 5 5* 3.0 3.0* 15 150 A mJ 3.8 mJ 4.5 100 41.7 0.8 0.33 V/ns W W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Thermal Characteristics Tstg -55 150 Thermal Resistance, Junction-to-Case RthJC 1.25 3.0 /W Thermal Resistance, Junction-toAmbient RthJA 62.5 62.5 /W PIN CONNECTION D Q KF5N65P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR A E I K M D NN KF5N65P O C F G B Q L J P H 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8+_ 0.1 3.6 +_ 0.2 2.8 +_ 0.1 3.7 0.5+0.1/-0.05 1.5 13.08+_ 0.3 1.46 1.4 +_ 0.1 1.27+_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 +_ 0.2 9.2 +_ 0.2 TO-220AB KF5N65F AC F O ...