SEMICONDUCTOR
TECHNICAL DATA
KF7N68F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe MOSF...
SEMICONDUCTOR
TECHNICAL DATA
KF7N68F
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=680V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.25 @VGS=10V Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above 25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
VDSS VGSS
ID IDP EAS EAR dv/dt
PD Tj Tstg
680 30 7*
4.2* 18* 212
1.6
4.5 44.6 0.36 150 -55 150
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RthJC RthJA
2.8 62.5
* : Drain current limited by maximum junction temperature.
UNIT V V
A
mJ mJ V/ns W W/
/W /W
Q
AC
F O
K
E
LM D
NN 123
G B
J
R
H
1. GATE 2. DRAIN 3. SOURCE
DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2
*Single Gauge Lead Frame
TO-220IS (1)
PIN CONNECTION
D
G S
2013. ...