AUIRG4BC30U-S

AUTOMOTIVE GRADE PD - 96335 INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Industry standard D2Pak & TO-262 package Lead-Free, RoHS Compliant Automotive Qualified * AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT C VCES = 600V G E n-channel VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A Benefits Typical Applications: SMPS, PFC D2Pak TO-262 AUIRG4BC30U-S AUIRG4BC30U-SL GC E Absolute Maximum Ratings Gate Collector Emitter Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current ICM Pulsed Collector Current  ILM Clamped Inductive Load Current ‚ VGE Gate-to-Emitter Voltage EARV Reverse Voltage Avalanche Energy ƒ PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and ...