AUIRG4PC40S-E

  AUTOMOTIVE GRADE Insulated Gate Bipolar Transistor Features  Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3  Industry standard TO-247AD package  Lead-Free  Automotive Qualified* C  G E n-channel  C AUIRG4PC40S-E VCES = 600V VCE(ON) typ. = 1.32V @ VGE = 15V, IC = 31A Benefits  Generation 4 IGBT's offer highest efficiency available  IGBT's optimized for specified application conditions  Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's G Gate GCE AUIRG4PC40S‐E        TO‐247AD  C Collector E Emitter Base part number AUIRG4PC40S-E Package Type TO-247AD Standard Pack Form Quantity Tube 25 Orderable Part Number AUIRG4PC40S-E Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current  Clamped Inductive Load Current  Continuous Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy  Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 60 31 120 120 ±20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Units V A  V W C Therm...