PD - 96334
AUTOMOTIVE GRADE AUIRGS30B60K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE(on) Non Punch Through IG...
PD - 96334
AUTOMOTIVE GRADE AUIRGS30B60K
INSULATED GATE BIPOLAR
TRANSISTOR
Features
Low VCE(on) Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient Maximum Junction Temperature rated at 175°C Lead-Free, RoHS Compliant Automotive Qualified *
AUIRGSL30B60K
C
G E
n-channel
VCES = 600V IC = 50A, TC=100°C
at TJ=175°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.95V
Benefits
Benchmark Efficiency for Motor Control
Rugged Transient Performance
Low EMI Excellent Current Sharing in Parallel Operation
D2Pak
TO-262
AUIRGS30B60K AUIRGSL30B60K
GC
E
Absolute Maximum Ratings
Gate
Collector
Emitter
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
VISOL
RMS Isolation Voltage, Terminal to Case, t=1 m...
