AUIRLZ24NS

AUTOMOTIVE GRADE AUIRLZ24NS AUIRLZ24NL Features l Advanced Process Technology l Logic Level Gate Drive l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G HEXFET® Power MOSFET D VDSS 55V RDS(on) max. 0.06Ω S ID 18A DD GS D2Pak AUILZ24NS S D G TO-262 AUIRLZ24NL Base Part Number AUIRLZ24NS Package Type D2-Pak Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRLZ24NS AUIRLZ24NSTRL AUIRLZ24NL TO-262 Tube 50 AUIRLZ24NL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipat...