BUJ303CD

BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 1.2 Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage capability Very low switching and conduction losses 1.3 Applications DC-to-DC converters High frequency electronic lighting ballasts Inverters Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current Fig. 1; Fig. 2; Fig. 4 Ptot total power dissipation Tmb ≤ 25 °C; Fig. 3 VCESM collector-emitter peak VBE = 0 V voltage Static characteristics hFE DC current gain IC = 10 mA; VCE = 3 V; Tmb = 25 °C; Fig. 12 IC = 250 mA; VCE = 3 V; Tmb = 25 °C; Fig. 12 IC = 800 mA; VCE = 3 V; Tmb = 25 °C; Fig. 12 Min Typ Max Unit - - 5A - - 80 W - - 1050 V 28 34 47 35 43 57 31 37 48 Scan or click this QR code to view the latest information for this product NXP Semiconductors BUJ303CD NPN power transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector[1] 3 E emitter mb C mounting base; connected to collector 2 13 DPAK (SOT428) Graphic symbol C B E sym123 [1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package. 3. O...