BUJD203AX

BUJD203AX NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package. 1.2 Features and benefits „ Fast switching „ High voltage capability „ Integrated anti-parallel E-C diode „ Isolated package „ Very low switching and conduction losses 1.3 Applications „ DC-to-DC converters „ Electronic lighting ballasts „ Inverters „ Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current see Figure 1; see Figure 2; DC; see Figure 4 Ptot total power Th ≤ 25 °C; see Figure 3 dissipation VCESM collector-emitter peak voltage VBE = 0 V Static characteristics hFE VCEOsus DC current gain collector-emitter sustaining voltage IC = 500 mA; VCE = 5 V; see Figure 11; Th = 25 °C VCE = 5 V; IC = 3 A; see Figure 11; Th = 25 °C IB = 0 A; LC = 25 mH; IC = 10 mA; see Figure 6; see Figure 7 Min Typ Max Unit - - 4A - - 26 W - - 850 V 13 21 32 - 12.5 - 400 450 - V NXP Semiconductors BUJD203AX NPN power transistor with integrated diode 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description B base C collector E emitter n.c. mounting base; isolated Simplified outline mb Graphic symbol C B E sym131 3. Ordering information 123 SOT186A (TO-220F) Tabl...