IRFH7882PBF

VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) ID (@TC (Bottom) = 25°C) 80 3.1 49 0.9 180 V m nC  A   FastIRFET™ IRFH7882PbF HEXFET® Power MOSFET   PQFN 5X6 mm Applications  Optimized for Secondary Side Synchronous Rectification  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Hot Swap and Active O-Ring  BLDC Motor Drive Features Low RDS(ON) (< 3.1m) Low Thermal Resistance to PCB (<0.64°C/W) 100% Rg Tested Low Profile (<1.05 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1 Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFH7882PbF Package Type   PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH7882TRPbF Absolute Maximum Ratings Parameter VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range   Max. ± 20 26 180 114 290 4.0 195 0.03 -55 to + 150   Units V A W W/°C °C Notes  through  are on page 8 1 www.irf...