IRFH8202TRPBF

VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@TC(Bottom) = 25°C) 25 1.05 52 1.3 h100 V mΩ nC Ω A Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Low RDSon (<1.05 mΩ) Low Thermal Resistance to PCB (<0.8°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification StrongIRFET™ IRFH8202TRPbF HEXFET® Power MOSFET PQFN 5X6 mm results in ⇒ Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number IRFH8202PbF Package Type PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Orderable part number IRFH8202TRPbF Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current gPower Dissipation gPower Dissipation gLinear Derating Factor Operating Junction and Storage Temperature Range Max. ± 20 47 30 h100 h100 400 3.6 160 0.029 -55 to + 150 Units V A W W/°C °C Notes  through † are on page 9 1 w...