Document
VDSS RDS(on) max (@ VGS = 10V) Qg (typical)
Rg (typical)
30 V
1.3 m 50 nC 1.3
ID (@TC (Bottom) = 25°C)
100
A
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverters
StrongIRFET™ IRFH8307TRPbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features Low RDSon (<1.3m) Low Thermal Resistance to PCB (<0.8°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification
Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number
Package Type
IRFH8307PbF
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRFH8307TRPbF
Absolute Maximum Ratings
VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC (Bottom) = 25°C ID @ TC (Bottom) = 100°C IDM PD @TA = 25°C PD @TC (Bottom) = 25°C
TJ TSTG
Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Max. ± 20 42 33 100 100 400 3.6 156 0.029 -55 to + 150
Units V
A
W W/°C
°C
Notes through are on page 9 1 www.irf.com © 2015 International Rectifier
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May 19, 2015
IRFH8307TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th) IDSS
Gate Threshold Voltage Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs Qg
Qg
Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on)
tr td(off) tf Ciss Coss Crss
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time
Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Avalanche Characteristics Parameter
EAS Single Pulse Avalanche Energy IAR Avalanche Current
Diode Characteristics
Parameter IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
Min. 30 ––– ––– ––– 1.35 ––– –––
––– ––– ––– 190 –––
–––
––– ––– ––– ––– ––– ––– ––– –––
––– ––– ––– ––– ––– –––
Typ. ––– 0.02 1.1 1.7 1.80 -6.2 –––
––– ––– ––– ––– 120
50
12 6.5 16 16 23 30 1.3 26
30 31 13 7200 1360 590
Max. Units
Conditions
––– –––
1.3 2.1 2.35 –––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C,.