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IRFH8307TRPBF Dataheets PDF



Part Number IRFH8307TRPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFH8307TRPBF DatasheetIRFH8307TRPBF Datasheet (PDF)

VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) 30 V 1.3 m 50 nC 1.3    ID (@TC (Bottom) = 25°C) 100 A Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverters StrongIRFET™ IRFH8307TRPbF HEXFET® Power MOSFET   PQFN 5X6 mm Features Low RDSon (<1.3m) Low Thermal Resistance to PCB (<0.8°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Indust.

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VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) 30 V 1.3 m 50 nC 1.3    ID (@TC (Bottom) = 25°C) 100 A Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverters StrongIRFET™ IRFH8307TRPbF HEXFET® Power MOSFET   PQFN 5X6 mm Features Low RDSon (<1.3m) Low Thermal Resistance to PCB (<0.8°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number Package Type    IRFH8307PbF PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH8307TRPbF Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC (Bottom) = 25°C ID @ TC (Bottom) = 100°C IDM PD @TA = 25°C PD @TC (Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation  Power Dissipation  Linear Derating Factor  Operating Junction and Storage Temperature Range   Max. ± 20 42 33 100 100 400 3.6 156 0.029 -55 to + 150   Units V A  W W/°C °C Notes  through  are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015   IRFH8307TRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy  IAR Avalanche Current  Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 190 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––   Typ. ––– 0.02 1.1 1.7 1.80 -6.2 ––– ––– ––– ––– ––– 120 50 12 6.5 16 16 23 30 1.3 26 30 31 13 7200 1360 590        Max. Units Conditions ––– ––– 1.3 2.1 2.35 ––– V VGS = 0V, ID = 250µA V/°C Reference to 25°C,.


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