IRFHM3911TRPBF

VDSS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TC (Bottom) = 25°C) 100 115 17 11 V m nC A Applications  POE+ Power Sourcing Equipment Switch IRFHM3911TRPbF HEXFET® Power MOSFET    S SG S D D D D D PQFN 3.3X3.3 mm Features Large Safe Operating Area (SOA) Low Thermal Resistance to PCB Low Profile (<1.05mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Benefits Increased Ruggedness Enable better thermal dissipation Increased Power Density results in Multi-Vendor Compatibility  Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFHM3911PbF Package Type   PQFN 3.3mm x 3.3mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM3911TRPbF Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current  Power Dissipation  Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range   Max. ± 20 3.2 11 6.6 20 36 2.8 29 0.023 -55 to + 150   Units V A W W/°C °C Notes  through  are on page 9 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedbac...